Time-dependent POVM reconstruction for single-photon avalanche photo diodes using adaptive regularization

Neural Imaging Using Single-Photon Avalanche Diodes

Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...

Two-dimensional photo-mapping on CMOS single-photon avalanche diodes.

Two-dimensional (2-D) photo-count mapping on CMOS single photon avalanche diodes (SPADs) has been demonstrated. Together with the varied incident wavelengths, the depth-dependent electric field distribution in active region has been investigated on two SPADs with different structures. Clear but different non-uniformity of photo-response have been observed for the two studied devices. With the h...

Neural Imaging Using Single-Photon Avalanche Diodes

INTRODUCTION This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimum dark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. METHODS The neural imaging pro...

Memory effect in silicon time-gated single-photon avalanche diodes

Resonant-Cavity-Enhanced Single Photon Avalanche Diodes

We present a resonant-cavity-enhanced Single Photon Avalanche Diode (SPAD) fabricated on a reflecting siliconon-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector fabricated using a commercially available double-SOI process. The resonant-cavity-enhanced (RCE) SPAD detectors have peak photon detection efficiencies ranging from 41% at 780nm to 32% at 85...